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SCEJ 51st Autumn Meeting (2020)

Program search result : 霜垣 幸浩 : 8 programs

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Authors and Chairs (J) field exact matches “霜垣 幸浩”; 8 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

TimePaper
ID		Title / AuthorsKeywordsTopic codeAck.
number
Day 1
14:20– 14:40		X117Effect of supercritical CO2 drying condition on properties of porous carbon nanofiber electrode and Li-O2 battery performance.
(U. Tokyo) *(Stu)Zhang Yiping, (Thailand NSTDA) Kunanusont Nattanai, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro, (U. Tokyo/Tokyo Tech) (Reg)Shimoyama Yusuke
Supercritical CO2 drying
Carbon nanofiber electrode
Li-O2 battery
SY-74273
Day 2
13:20– 13:40		K214Effect of SiCl4 addition for SiC-CVD from MTS/H2
(U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
CVD
SiC
Recycle
ST-22556
Day 2
13:40– 14:00		K215Manufacture of SiCf/SiC by chlorine-free Chemical Vapor Infiltration
(U. Tokyo) *(Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
chemical vapor infiltration
tetramethylsilane
ST-22822
Day 2
14:20– 14:40		K217Kinetic analysis of TiAlN-CVD process for construction of reaction model (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro
CVD
TiAlN
cutting tool
ST-22153
Day 3
10:40– 11:00		K306Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design
(U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.
Reaction model
SiC
CVD
ST-22499
Day 3
11:00– 11:20		K307Time-evolution of film thickness profiles by level set method during CVD multiscale simulation
(U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
multiscale simulation
chemical vapor deposition
level set method
ST-22504
Day 3
13:40– 14:00		K315Theoretical study for modeling surface reactions on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
CH3SiCl3
SiC CVI
surface reaction
ST-22665
Day 3
14:00– 14:20		K316Construction of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC-CVI
Surface reaction mechanism
CH3SiCl3
ST-22682

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SCEJ 51st Autumn Meeting (2020)

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