
SCEJ 51st Autumn Meeting (2020)
Program search result : 理論 : 4 programs
All sessions can be attended from
the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.
Title (J) field includes “理論”; 4 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.
| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
Day 2 13:40– 14:00 | T215 | PID control design suitable for chemical plant level control based on IMC theory
(TUAT) *(Stu)Otakara Shigeki, (Reg)Yamashita Yoshiyuki | process control PID control Internal model control
| SY-67 | 172 |
Day 3 11:40– 12:00 | I309 | [The Outstanding Paper Award] Prediction of catalytic activity for supported metal catalyst using d-band center theory and HSAB concept
(Suzuki Motor) *(Reg)Miura Kazuya, Kimata Fumikazu, (Shizuoka U.) (Reg)Watanabe Ryo, (Reg)Fukuhara Choji | supported metal catalyst d-band center theory HSAB concept
| SY-63 | 35 |
Day 3 13:40– 14:00 | K315 | Theoretical study for modeling surface reactions on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro | CH3SiCl3 SiC CVI surface reaction
| ST-22 | 665 |
Day 3 14:00– 14:20 | K316 | Construction of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro | SiC-CVI Surface reaction mechanism CH3SiCl3
| ST-22 | 682 |
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SCEJ 51st Autumn Meeting (2020)
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