
SCEJ 86th Annual Meeting (2021)
Program search result : SiC : 3 programs
The preprints(abstracts) are now open (Mar. 8th). These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants (excludes free registration) and invited persons are required.
Keywords field exact matches “SiC”; 3 programs are found.
The search results are sorted by the start time.
| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
Day 1 14:20– 15:20 | PA128 | Development of chlorine-free SiC-CVI process to achieve uniform infiltration without particle generation
(U. Tokyo) *(Stu)Kondo Yoshifumi, (Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro | SiC CVI CVD
| 5-h | 506 |
Day 1 16:20– 16:40 | N123 | ClF3 gas distributor design for SiC wafer etching
(Yokohama Nat. U.) Hayashi Masaya, *(Reg)Habuka Hitoshi, (Kanto Denka Kogyo) (Cor)Takahashi Yoshinao, (AIST) Kato Tomohisa | SiC Wafer etching CLF3 gas
| 11-c | 43 |
Day 3 14:20– 14:40 | K317 | Conformal growth of SiC onto trenches by CVI from MTS/H2 with using quasi-0th-order reaction and sacrificial layer
(U. Tokyo) *(Stu)Otaka Yuhei, (Reg)Sato Noboru, (Stu)Kondo Yoshifumi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro | SiC CVD CVI
| 5-h | 383 |
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SCEJ 86th Annual Meeting (2021)
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