$B1)?<(B $BEy!J2#IM9qN)Bg3X!K!&6b0f(B $B=S8w!J2#IM9qN)Bg3X!K(B |
$B?7$?$J$?$J5!G=$rM-$9$k:`NA$,H/L@!&H/8+!&3+H/$5$l!$@hC
$B:G=*99?7F|;~!'(B2019-08-18 04:39:02
$B$3$NJ,N`$G$h$/;H$o$l(B $B$F$$$k%-!<%o!<%I(B | $B%-!<%o!<%I(B | $B | |
---|---|---|---|
ClF3 | 1$B7o(B | ||
Power devices | 1$B7o(B | ||
Silicon carbide | 1$B7o(B | ||
SiC | 1$B7o(B | ||
Development | 1$B7o(B | ||
CVD | 1$B7o(B | ||
doping | 1$B7o(B | ||
silicon | 1$B7o(B | ||
Etching | 1$B7o(B |
$B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BH/I=7A<0(B | |
---|---|---|---|
7 | $B;0%U%C2=1vAG%,%9$rMQ$$$?D>7B(B200 mm$BC:2=%1%$AG%&%'%O%(%C%A%s%0AuCV$N@_7W(B | ClF3 Etching SiC | O |
8 | $B;0%U%C2=1vAG%,%9$K$h$k(B4H-SiC$B%&%'%O%(%C%A%s%0J,I[$N6Q0l2=(B | O | |
11 | $B%7%j%3%sI=LL$K$*$1$k;01v2=%[%&AG%,%9$N2=3XH?1~(B | doping silicon CVD | O |
18 | $BC:2=7>AG%Q%o! | Silicon carbide Power devices Development | O |