$BBh(B 1 $BF|(B | |||||
---|---|---|---|---|---|
$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B | $BHV9f(B $B | |
$BIt2q%;%C%7%g%s(B SE-11. <$BG.J* | |||||
(9:00$B!A(B10:00) ($B:BD9(B $B:4Gl(B $BN4!&A0@n(B $B=!B'(B) | |||||
O101 | $BFs | two-dimensional flow velocity field energy transfer | SE-11 | 730 | |
O102 | $B%^%$%/%m5^=L>.5^3HBgN.O)Cf$N%3!<%J!<124Q;!$K$h$k%R%"%k%m%s;@MO1U$NCF@-IT0BDj$N2r@O(B | Elastic instability Hyaluronate solution | SE-11 | 657 | |
O103 | $B6J$,$j$rM-$9$k6k7A4I$K$*$1$k5^<}=L5^3HBg05NOB;<:$N?tCM2r@O(B | Sudden Expansion Sudden Contraction Pressure Loss | SE-11 | 302 | |
(10:00$B!A(B11:00) ($B:BD9(B $BNkLZ(B $BMN!&Bg@n86(B $B??0l(B) | |||||
O104 | $B3&LL3h@-:^?eMO1U$K$h$kDq93Dc8:N.$l$N2D;k2=$HN.$l9=B$$N%b%G%k2=(B | Drag Reduction Surfactant Flow Visualization | SE-11 | 839 | |
O105 | $B3&LL3h@-:^$K$h$kIwGH$N8:?j:nMQ(B | Wave damping surfactant fluid | SE-11 | 102 | |
O106 | $B6bLV$HB?9&HD$K$h$j7A@.$5$l$k1UN.$N(BPIV$B7WB,(B | PIV Hot film anemometer Flow visualization | SE-11 | 911 | |
(11:00$B!A(B12:00) ($B:BD9(B $B>.?9(B $B8g!&A0@n(B $B=!B'(B) | |||||
O107 | Front-Tracking$BK!$K$h$k%l%$%j! | Rayleigh-Taylor Instability Front-Tracking Method Numerical simulation | SE-11 | 396 | |
O108 | $B>F7k%,%i%9%S!<%:B?9&BN$X$N1UE)?;=a$N?tCM2r@O(B | packed bed penetration Lattice Boltzmann method | SE-11 | 138 | |
O109 | $BHy:YN.O)Fb$N5$1U<+M33&LL>e$KM65/$7$?%^%i%s%4%KBPN.$N2D;k2=$H$=$NB.EY7WB,(B | Marangoni effect PIV Capillary channel | SE-11 | 723 | |
(13:00$B!A(B13:40) ($B;J2q(B $B4dED(B $B=$0l(B) | |||||
O113 | [$B>7BT9V1i(B] $BD62;GH%I%C%W%i!<%l%*%a%H%j!<$N3+H/(B | Ultrasound Doppler Rheometry | SE-11 | 30 | |
(13:40$B!A(B14:20) ($B;J2q(B $BC+8}(B $B5.;V(B) | |||||
O115 | [$B>7BT9V1i(B] $B$;$sCGN.$*$h$SEE>l2<$K$*$1$kHsAjMO9bJ,;R%V%l%s%I$N(B3$B | Immiscible polymer blend Three-dimensional structure Rheology | SE-11 | 88 | |
(14:20$B!A(B15:00) ($B:BD9(B $BBg@n86(B $B??0l!&A0@n(B $B=!B'(B) | |||||
O117 | $BK'9aB2%"%_%I%*%$%k%2%k2=:^(B; PMDA$B$N%l%*%m%8! | Organogelator Rheology Stability | SE-11 | 856 | |
O118 | $BN.DL7O05NO?6F0C&K"K!$K$*$1$k05NO?6F00u2CIt$N8!F$(B | defoaming pressure-oscillation shear-thinning fluid | SE-11 | 463 | |
(15:00$B!A(B16:00) ($B:BD9(B $B>>7((B $BMN2p!&Bg@n86(B $B??0l(B) | |||||
O119 | $B%i%0%i%s%8%eE* | MPS phase transition heat transfer | SE-11 | 612 | |
O120 | $B29EY:9$HG;EY:9$K5/0x$9$k%^%i%s%4%KBPN.$N6&B88z2L$K$h$kBPN.9=B$0MB8@-$K4X$9$k?tCM2r@O(B | Marangoni convection Floating zone technique Si/Ge | SE-11 | 617 | |
O121 | Development of a new contact model for adhesive particles in the discrete particle simulation | adhesive contact model discrete element method | SE-11 | 118 | |
(16:00$B!A(B17:00) ($B:BD9(B $B?e8}(B $B>0!&A0@n(B $B=!B'(B) | |||||
O122 | $BDlLLCf1{$+$i$N%(%"%l!<%7%g%s$r$H$b$J$&6k7AMF4oFb$K$*$1$k5$1UFsAjN.$N?tCM2r@O(B | Gas-Liquid flow Two Phase Flow Numerical Simulation | SE-11 | 832 | |
O123 | $B05=L;E;v$rMW$7$J$$>J%(%M>xN1%7%9%F%`$NG.$*$h$S>xN1FC@-(B | HIDiC Energy conservation Ethanol distillation | SE-11 | 319 | |
O124 | $BMf@{7?%_%K%A%c%M%k$K$h$kAFN3$NJ,N%!&J,5i(B | Coarse particle separation/classification Spiral mini-channel CFD | SE-11 | 491 | |
$BBh(B 2 $BF|(B | |||||
$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B | $BHV9f(B $B | |
$BIt2q%7%s%]%8%&%`(B SY-2. <$B%W%m%;%90BA44IM}$N2]Bj$H%"%W%m!<%A(B> | |||||
(9:20$B!A(B10:40) ($B:BD9(B $BIpED(B $BOB9((B) | |||||
O202 | $B0BA4It2q(BWG$B%F!<%^$H%7%s%]%8%&%`
| Process Safety Management Lifecycle Safety Research Theme | SY-2 | 91 | |
O203 | $B;v8N;vNc$X$N%a%H%j%/%9$N3hMQ$K8~$1$F(B | Process Safety Management Lagging Metrics | SY-2 | 674 | |
O204 | $B@_HwJ]A4(BWG$BJs9p=q$N35MW(B | Plant Maintenance Business Process Model Technology Requirement Specification | SY-2 | 92 | |
O205 | $B%W%m%;%9(B/$B%W%i%s%H@_7W$K$D$J$,$k%W%m%;%9%1%_%9%H%j!<(B | Process Chemistry Process/Plant Design Engineering Business Process Model | SY-2 | 423 | |
(10:40$B!A(B12:00) ($B:BD9(B $B@D;3(B $BFX(B) | |||||
O206 | $B%W%m%;%90BA4>pJs$N3hMQ(B | Process Safety Information Process Safety Management Plant Lifecycle | SY-2 | 196 | |
O207 | $B;v8N2r@O%,%$%I%i%$%s:n@.(BWG$B$N7W2h(B | Incident Investigation Process Hazard Analysis Lifecycle Engineering | SY-2 | 183 | |
O208 | $B2=3X;:6H;v8ND4::Js9p=q$K$*$1$k0BA4J82=(B | Safety Culture Chemical Industry Accident | SY-2 | 314 | |
O209 | $B9TF0FC@-$NGD0.$G;v8NKI;_(B | Process Safety | SY-2 | 45 | |
$BIt2q%7%s%]%8%&%`(B SY-9. <CVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!](B> | |||||
(13:00$B!A(B14:00) ($B:BD9(B $B6LCV(B $BD> | |||||
O213 | [$BE8K>9V1i(B] 3D$B%a%b%j;~Be$N%W%m%;%95;=QE8K>(B | semiconductor fabrication process technology 3D memory | SY-9 | 129 | |
O215 | $BD6NW3&MOBN$N29EY8{G[$rMxMQ$7$?%"%s%H%i%;%s@=Kl$K$*$1$k2aK0OBEY$*$h$SG;EY$N1F6A(B | Supercritical CO2 anthracene crystallization | SY-9 | 156 | |
(14:00$B!A(B15:00) ($B:BD9(B $B2O@%(B $B85L@(B) | |||||
O216 | $B%3%s%U%)!<%^%k$JD6NW3&N.BNBO@Q$K$*$1$k(BCO2$B05NO$N1F6A(B | supercritical fluid deposition pressure kinetics | SY-9 | 543 | |
O217 | $BD6NW3&MOBN5^B.KDD%K!$K$h$k(BTIPS$B%Z%s%?%;%sGvKlAO@=$HM-5!GvKl%H%i%s%8%9%?$NFC@-I>2A(B | Supercritical carbon dioxide TIPS-pentacene thin films Organic thin film transistor (OTFT) | SY-9 | 668 | |
O218 | $BD6NW3&Fs;@2=C:AG$rMQ$$$?;@2=E4GvKl$N:n@.(B | supercritical CO2 FeRAM iron oxide | SY-9 | 758 | |
(15:00$B!A(B16:00) ($B:BD9(B $B2<;3(B $BM52p(B) | |||||
O219 | [$B>7BT9V1i(B] $B9b05(BCO2$BE:2C$K$h$kG4EYDc2<$rMxMQ$7$?9b05J.L8@.Kl5;=Q(B | high pressure carbon dioxide spray deposition viscosity | SY-9 | 131 | |
O220 | $BD6NW3&N.BN$rMQ$$$?(BTiO2$B%J%N:Y9&$X$N(BCuInS2$BKd$a9~$_@.Kl(B | supercritical fluid deposition nanostructure compound semiconductor | SY-9 | 442 | |
O221 | $B%W%i%:%^(BCVD$BK!$rMQ$$$?%7%j%+7O%,%9%P%j%"Kl$N:n@=$H%,%9F)2aB.EY$NB,Dj(B | plasma CVD silica-based film gas barrier | SY-9 | 757 | |
(16:00$B!A(B17:00) ($B:BD9(B $B1)?<(B $BEy(B) | |||||
O222 | $B%W%i%:%^(BCVD$BK!$G:n@=$7$?%7%j%+Kl$N2=3X9=B$$HKlFC@-(B | plasma CVD chemical structure film properties | SY-9 | 815 | |
O223 | $B0[$J$kC:AG8;$rMQ$$$?%W%i%:%^(BCVD$B$K$h$k%+!<%\%s%J%N%&%)!<%k$N9g@.$H$=$NFC@-I>2A(B | carbon nanowall carbon monoxide | SY-9 | 897 | |
O224 | $B%0%i%U%'%s$N | Graphene Chemical vapor deposition Nucleation and growth | SY-9 | 605 | |
$BBh(B 3 $BF|(B | |||||
$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B | $BHV9f(B $B | |
$BIt2q%7%s%]%8%&%`(B SY-9. <CVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!](B> | |||||
(9:00$B!A(B10:00) ($B:BD9(B $BCSED(B $B7=(B) | |||||
O301 | $BHy:Y%H%l%s%A$K$*$1$k@=KlJ* | reactivity analysis fine trench Chemical Vapor Deposition | SY-9 | 861 | |
O302 | $BD69b%"%9%Z%/%HHf%_%/%m%-%c%S%F%#$rMQ$$$?(BSiC-CVI$BK!$N%b%G%j%s%0(B | CVD SiC methyltrichlorosilane | SY-9 | 747 | |
O303 | $B86NAC:2=?eAG | CVD Pyrolysis Carbon | SY-9 | 278 | |
(10:00$B!A(B11:00) ($B:BD9(B $B?9(B $B?-2p(B) | |||||
O304 | $BF3F~%,%9$r@Z$jBX$($k(BCVD$B%W%m%;%9$NHsDj>o%,%9N.$l%7%_%e%l!<%7%g%s(B | CVD ALD simulation | SY-9 | 608 | |
O305 | SiHCl3$B$K$h$k%7%j%3%s@.Kl;~$NI{@8@.J*7A@.5!9=(B | Silicon epitaxial growth trichlorosilane by-products | SY-9 | 11 | |
O306 | $B1vAG(B-$B%1%$AG4^2=9gJ*$rMQ$$$?(BCVD$B$G$N2 | silicon-chlorine compounds by-products elementary reaction simulation | SY-9 | 840 | |
(11:00$B!A(B12:00) ($B:BD9(B $BAz3@(B $B9,9@(B) | |||||
O307 | $BM-5!H>F3BN:`NA>:2Z@:@=%W%m%;%9$N2r@O(B | sublimation purification organic semiconductors | SY-9 | 468 | |
O308 | $B5$AjK!$K$h$k(BAg-TiO2$B%J%NN3;R:.9gBO@QKl$N:n@=(B | PECVD Nanoparticle synthesis PVD | SY-9 | 273 | |
O309 | [$B>7BT9V1i(B] $BH>F3BN%W%m%;%9MQM-5!6bB086NA$N@_7W!"9g@.$*$h$S(BALD$B$X$NE,MQ(B | atomic layer deposition conformal growth reaction mechanism | SY-9 | 132 | |
(13:00$B!A(B14:00) ($B:BD9(B $BLnED(B $BM%(B) | |||||
O313 | [$BE8K>9V1i(B] $B2=9gJ*H>F3BN%J%N%o%$%d$N%X%F%m%(%T%?%-%7%c%k@.D9$HE8K>(B | compound semiconductor nanowire heteroepitaxial growth | SY-9 | 128 | |
O315 | $BG.(BCVD $BK!$G:n@=$7$?;@2=0!1tGvKl$NFC@-(B | CVD Zinc oxide transparent conductive film | SY-9 | 767 | |
(14:00$B!A(B15:00) ($B:BD9(B $B=);3(B $BBY?-(B) | |||||
O316 | $B0[$J$k;@AG05NO$G:n@=$7$?F3EE@-;@2=J*EE6K$rM-$9$k6/M6EEBN%-%c%Q%7%?$NEE5$FC@-(B | Ferroelectric capacitor pulsed laser deposition oxygen pressure | SY-9 | 645 | |
O317 | p$B7?%@%$%d%b%s%I>e$K(BEB$B>xCeK!$G7A@.$7$?(BTi$B2=9gJ*(B/Pt/Au$BEE6K$N(BTLM$BI>2A(B | diamond contact resistance electron beam evaporated | SY-9 | 787 | |
O318 | [$B>7BT9V1i(B] $BCb2=J*GvKl$NHy:Y9=B$@)8f$H%i%8%+%k$rMQ$$$?Dc29$G$N@.KlJ}K!(B | nitride thin film sputtering radical nitridization | SY-9 | 130 | |
(15:00$B!A(B15:40) ($B:BD9(B $BsnF#(B $B>f{J(B) | |||||
O319 | $B5^B.>xCe$H$=$N>lMOM;7k>=2=$K$h$kBgN37B7k>=(BSi$BGvKl:n@=K!$N3+H/(B | crystalline silicon thin films vapor deposition liquid phase crystallization | SY-9 | 643 | |
O320 | CVD$B$K$h$k&A(B-Al2O3$BGvKl$NG[8~@-@)8f(B | CVD Al2O3 crystal-orientation | SY-9 | 827 |