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SCEJ 51st Autumn Meeting (2020)

Program search result : 杉目 恒志 : 4 programs

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Authors and Chairs (J) field exact matches “杉目 恒志”; 4 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

TimePaper
ID		Title / AuthorsKeywordsTopic codeAck.
number
Day 2
9:00– 10:25		PA209Supporting catalyst from atomized metal nitrates and synthesizing long carbon nanotubes by fluidized bed
(Waseda U.) *(Stu)Shirakawa Hiroto, Li Mochen, (Reg)Sugime Hisashi, (Reg)Osawa Toshio, (Reg)Noda Suguru
Carbon nanotube
Fluidized bed
Chemical vapor deposion
SY-79234
Day 3
9:00– 9:20		K301Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene
(Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru
Carbon nanoparticle
Carbon nanotube
CVD
ST-22175
Day 3
9:20– 9:40		K302Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube
(Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru
carbon nanotube
electron field emitter
hierarchical structure control
ST-22230
Day 3
13:00– 14:20		   Chair: Sugime Hisashi
K313[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition
(Hirosaki U.) Nakazawa Hideki
diamond-like carbon
plasma-enhanced chemical vapor deposition
silicon
ST-22248
K314Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition
(Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.
CVD
Residual stress
Silica gas barrier film
ST-2213
K315Theoretical study for modeling surface reactions on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
CH3SiCl3
SiC CVI
surface reaction
ST-22665
K316Construction of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC-CVI
Surface reaction mechanism
CH3SiCl3
ST-22682

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SCEJ 51st Autumn Meeting (2020)

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