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SCEJ 86th Annual Meeting (2021)

Program search result : 5-h : 11 programs

The preprints(abstracts) are now open (Mar. 8th). These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants (excludes free registration) and invited persons are required.

Topics Code field begins with “5-h”; 11 programs are found.
The search results are sorted by the start time.

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Day 1
13:2014:20
PA129Direct synthesis of graphene on insulating substrate using chloroform
(Waseda U.) *(Stu)Nakamura S., (Stu)Tanaka H., (Reg)Sugime H., (Reg)Noda S.
graphene
etching precipitation method
chloroform
5-h530
Day 1
13:2014:20
PA135Continuous gas-phase synthesis of highly crystalline single-wall carbon nanotubes via rapid heating of catalyst source
(Waseda U.) *(Stu)Chikaarashi Itsuki, Zihao Zhang, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Reg)Noda Suguru
carbon nanotube
chemical vapor deposition
nanoparticle catalyst
5-h565
Day 1
13:2014:20
PA139Spectoroscopy of plasma emisson during film deposition in HMDSO/AR PE-CVD
(Gifu U.) *(Stu)Kuboniwa A., Komiyama M., (Reg)Nishida S.
CVD
film
plasma
5-h24
Day 1
14:2015:20
PA128Development of chlorine-free SiC-CVI process to achieve uniform infiltration without particle generation
(U. Tokyo) *(Stu)Kondo Yoshifumi, (Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
5-h506
Day 1
14:2015:20
PA134Control of CuInS2 Film Deposition Reaction and Film Properties by mist-switching Ultrasonic Spray Method
(UTokyo) *(Stu)Ijiro Kohei, (Reg)Sakai Enju, (Reg)Tsuji Yoshiko
CuInS2
ultrasonic spray method
solar cells
5-h254
Day 3
13:4014:00
K315Construction of surface reaction mechanism of carbon species in SiC-CVI process based on theoretical study
(U. Tokyo) *(Reg)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC CVI
surface reaction mechanism
CH3SiCl3
5-h538
Day 3
14:0014:20
K316Multiscale simulation framework for chemical vapor deposition in nonlinear surface reaction kinetics case
(U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
multiscale simulation
chemical vapor deposition
nonlinear reaction kinetics
5-h518
Day 3
14:2014:40
K317Conformal growth of SiC onto trenches by CVI from MTS/H2 with using quasi-0th-order reaction and sacrificial layer
(U. Tokyo) *(Stu)Otaka Yuhei, (Reg)Sato Noboru, (Stu)Kondo Yoshifumi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVD
CVI
5-h383
Day 3
15:0015:20
K319Si-B film formation using boron trichloride and dichlorosilane gases
(Yokohama Nat. U.) Otani Mana, Muroi Mitsuko, *(Reg)Habuka Hitoshi
Silicon-boron
CVD
BCL3
5-h42
Day 3
15:2015:40
K320Formation mechanism of core-shell Ni-SiO2 catalyst by flame spray pyrolysis
(Yamagata U.) (Reg)Fujiwara Kakeru
Flame spray pyrolysis
Ni catalyst
SiO2 shell
5-h424
Day 3
15:4016:00
K32114-cm-long carbon nanotube forest via in situ supplements of iron and aluminum vapor sources
(Waseda U.) *(Reg)Sugime Hisashi, Sato Toshihiro, Nakagawa Rei, (Shizuoka U.) Hayashi Tatsuhiro, (Reg)Inoue Yoku, (Waseda U.) (Reg)Noda Suguru
carbon nanotube
chemical vapor deposition
catalyst
5-h27

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SCEJ 86th Annual Meeting (2021)


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