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SCEJ 88th Annual Meeting (Tokyo, 2023)

Last modified: 2023-12-13 19:10:32

Hall and day program : Hall F, Day 1 : F113

The preprints(abstracts) are now open (Mar. 1st). These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants in Period I/II and invited persons are required.

Hall F(Lecture Hall Bldg., 2F L0023), Day 1(Mar. 15)

5

TimePaper
ID		Title / AuthorsKeywordsTopic codeAck.
number
5. Chemical reaction engineering
(12:40–13:00) (Chair: Nii Susumu)
12:40– 13:00F112[The SCEJ Award for Outstanding Research Achievement] Design of Heterogeneous Photocatalysts with Active Surfaces and Their Application to High Difficulty Reduction Reactions
(Osaka U.) *(Reg)Shiraishi Yasuhiro, (Reg)Hirai Takayuki
The SCEJ Award for Outstanding Research Achievement
0-b770
Organized Session (CVD Reactions Section, Division of Chemical Reaction Engineering)
(13:00–14:20) (Chair: Nishida Satoshi, Shimizu Hideharu)
13:00– 13:20F113Chemical Vapor Deposition Rate Control of Bismuth-based Perovskite Thin Film for Photovoltaic Performances Improvement
(Kyoto U.) *(Int)Yang Ziguang, (Stu)Togami Keito, (Stu)Tanabe Maika, (Reg)Kawase Motoaki
Chemical vapor deposition
Methylammonium bismuth iodide
Molten bismuth
5-h554
13:20– 13:40F114The coke deposition rate from paraffins and olefins
(Kyoto U.) *(Stu)Nakano Shinji, (Reg)Fujitsuka Hiroyasu, (Reg)Kawase Motoaki
fouling
coking
CVD
5-h528
13:40– 14:00F115Aluminum nitride film production by chemical vapor deposition from triethylaluminum
(Kyoto U.) *(Stu)Murahashi Kousuke, (Stu)Li Yafei, (Reg)Kawase Motoaki
CVD
triethylaluminum
AlN
5-h540
14:00– 14:20F116Molecular Simulation Study on Effect of Group-III Precursors on III-V Compound Crystal Growth
(Kyoto U.) *(Stu)Li Yafei, (Stu)Murahashi Kousuke, (Reg)Kawase Motoaki
MOCVD
molecular simulations
III-V compound
5-h547
(14:40–15:40) (Chair: Kawase Motoaki)
14:40– 15:00F118CVD process from dichlorosilane, boron trichloride and monomethylsilane gases
(Yokohama Nat. U.) Otani Mana, Muroi Mitsuko, *(Reg)Habuka Hitoshi
dihlorosilane
boron trichloride
monomethylsilane
5-h7
15:00– 15:20F119Refinement of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Reg)Sato Noboru, (Stu)Kimura Shunsuke, (Stu)Otaka Yuhei, Wakiyama Tomoya, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
surface reaction model
5-h245
15:20– 15:40F120In-situ visible light reflectance observation method for designing Co-ALD process with high substrate selectivity.
(U. Tokyo) *(Stu)Kimura Shunsuke, (Stu)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
ALD
in-situ observation
reflectance
5-h597
(16:00–16:40) (Chair: Habuka Hitoshi)
16:00– 16:20F122Density Function Theory Study of Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) Adsorption on Cu (111) surface
(U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Sato Noboru, (Stu)Yamaguchi Jun, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
Atomic Layer Depositon
Density Function Theory
Surface Adsorption
5-h217
16:20– 16:40F123Investigation on pretreatment conditions for low-resistivity copper film formation on dielectrics using supercritical fluid deposition
(U. Tokyo) *(Stu)Nakajima Yusuke, Huang Yuyuan, (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi
SCFD
Polymer
resistivity
5-h705
(16:40–17:00) (Chair: Kawase Motoaki)
16:40– 17:00CVD reaction subdivision encouragement award ceremony

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SCEJ 88th Annual Meeting (Tokyo, 2023)

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