Authors field exact matches “Sugime Hisashi”; 6 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
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Day 2 | Chair: | ||||
S201 | Observation of the initial process of Cobalt film growth using variations in reflected light intensity. | cobalt ALD reflectance | ST-24 | 895 | |
S202 | Morphology Improvement of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film for Photovoltaic Use | Chemical vapor deposition Methylammonium bismuth iodide Molten bismuth | ST-24 | 425 | |
S203 | Rate analysis of coke deposition from hydrocarbons with different degrees of unsaturation | coking CVD Carbon | ST-24 | 255 | |
S204 | Production of silicon-carbon composite materials by chemical vapor deposition for negative electrode of lithium-ion battery | Chemical Vapor Deposition (CVD) Silicon Lithium-ion battery | ST-24 | 76 | |
Day 2 | PA227 | Development of high-capacity electrochemical capacitors with carbon nanotube - polyaniline composite membrane | carbon nanotube polyaniline electrochemical capacitor | SY-79 | 584 |
Day 2 | PA235 | Electrochemical detection of guanine using long carbon nanotube electrode | carbon nanotube electrochemical biosensor guanine | SY-79 | 605 |
Day 2 | PA212 | Electrochemical detection of guanine using high density carbon nanotube forest | Carbon nanotube Electrochemical Biosensors Guanine | SY-79 | 650 |
Day 2 | PA244 | Synthesis of fluorine-free MXene and application to electrocatalysts for hydrogen evolution reaction | MXene hydrogen evolution reaction molten salt | SY-79 | 662 |
Day 2 | Chair: | ||||
S206 | Detailed study of the effect of SiCl4 addition to SiC-CVI by MTS/H2 | SiC CVI MTS | ST-24 | 862 | |
S207 | Investigation of high-speed impregnation conditions using high-concentration hydrogen supply in SiC-CVI process | SiC CVI CVD | ST-24 | 843 | |
S208 | [Invited lecture] Development of Epitaxial Growth for High Performance SiC Power Devices | Silicon carbide Power device Epitaxial growth | ST-24 | 518 |
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SCEJ 54th Autumn Meeting (Fukuoka, 2023)