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SCEJ 54th Autumn Meeting (Fukuoka, 2023)

Program search result : Sugime Hisashi : 6 programs

The preprints(abstracts) are now open (Aug. 28). These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants and invited persons are required.

Authors field exact matches “Sugime Hisashi”; 6 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Day 2
9:0010:20
   Chair: Sugime Hisashi, Shimizu Hideharu
S201Observation of the initial process of Cobalt film growth using variations in reflected light intensity.
cobalt
ALD
reflectance
ST-24895
S202Morphology Improvement of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film for Photovoltaic Use
Chemical vapor deposition
Methylammonium bismuth iodide
Molten bismuth
ST-24425
S203Rate analysis of coke deposition from hydrocarbons with different degrees of unsaturation
coking
CVD
Carbon
ST-24255
S204Production of silicon-carbon composite materials by chemical vapor deposition for negative electrode of lithium-ion battery
(Waseda U.) *(Stu·PCEF)Oka Junya, (Reg)Osawa Toshio, (Reg)Noda Suguru
Chemical Vapor Deposition (CVD)
Silicon
Lithium-ion battery
ST-2476
Day 2
9:3011:00
PA227Development of high-capacity electrochemical capacitors with carbon nanotube - polyaniline composite membrane
carbon nanotube
polyaniline
electrochemical capacitor
SY-79584
Day 2
9:3011:00
PA235Electrochemical detection of guanine using long carbon nanotube electrode
carbon nanotube
electrochemical biosensor
guanine
SY-79605
Day 2
10:3012:00
PA212Electrochemical detection of guanine using high density carbon nanotube forest
Carbon nanotube
Electrochemical Biosensors
Guanine
SY-79650
Day 2
10:3012:00
PA244Synthesis of fluorine-free MXene and application to electrocatalysts for hydrogen evolution reaction
MXene
hydrogen evolution reaction
molten salt
SY-79662
Day 2
10:4011:50
   Chair: Sugime Hisashi, Shimizu Hideharu
S206Detailed study of the effect of SiCl4 addition to SiC-CVI by MTS/H2
SiC
CVI
MTS
ST-24862
S207Investigation of high-speed impregnation conditions using high-concentration hydrogen supply in SiC-CVI process
SiC
CVI
CVD
ST-24843
S208[Invited lecture] Development of Epitaxial Growth for High Performance SiC Power Devices
Silicon carbide
Power device
Epitaxial growth
ST-24518
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SCEJ 54th Autumn Meeting (Fukuoka, 2023)


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