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SCEJ 54th Autumn Meeting (Fukuoka, 2023)

Last modified: 2023-12-10 19:09:26

Session programs : ST-24 : S201

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ST-24 [Trans-Division Symposium]
CVD, ALD and Dry Processes

Organizers: Nishida Satoshi (Gifu Univ.), Momose Takeshi (Kumamoto Univ.), Shimizu Hideharu (Taiyo Nippon Sanso)

Hall S, Day 1 | Hall S, Day 2

TimePaper
ID		Title / AuthorsKeywordsTopic codeAck.
number
Hall S(815), Day 1(Sep. 11)
(13:15–13:20)
13:15– 13:20Opening remark
(13:20–14:40) (Chair: Momose Takeshi, Nishida Satoshi)
13:20– 14:00S114[Review lecture] R&D Trend and Future Prospect of 3D LSI Chip Stacking Technology
(Kumamoto U.) Aoyagi Masahiro
3D-IC
chip stacking
TSV
ST-24814
14:00– 14:20S116Development of Molybdenum Atomic Layer Deposition Process for Next Generation ULSI Interconnect
(U. Tokyo) *(Stu)Liu Haonan, (Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
ALD
Molybdenum
interconnect
ST-24845
14:20– 14:40S117Examination of selective deposition process by Co-ALD
(U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
cobalt
ALD
selective deposition
ST-24837
14:40– 15:00Break
(15:00–17:00) (Chair: Shimada Manabu, Habuka Hitoshi)
15:00– 15:20S119Precursor interactions for SiCxNyOz plasma-enhanced chemical vapor deposition at room temperature
(Yokohama Nat. U.) Kawakami Hiroki, Hori Kenta, Watanabe Toru, *(Reg)Habuka Hitoshi
SiCNO
PECVD
Interaction
ST-2494
15:20– 15:40S120Low temperature CVD process development for AlN thin films for 3DICs.
(U. Tokyo) *(Stu)Obara S., Ninomiya T., Takagi T., (Reg)Momose T., (Reg)Shimogaki Y.
AlN film
chemical vapor deposition
low temperature
ST-24229
15:40– 16:00S121Feed of Gaseous Boron Source Using Solid Boron and Water Vapor and Synthesis of Boron Nitride Nanotubes via Template Coating Method
(Waseda U.) *(Stu·PCEF)Kaida Takazumi, Takahashi Hiromu, (Reg)Li Mochen, (Reg)Osawa Toshio, (Reg)Noda Suguru
Boron Nitride Nanotube (BNNT)
Template coating method
Boron oxide
ST-24168
16:00– 16:20S122Development of low-resistivity copper thin film formation process on polymer by supercritical fluid thin film deposition method
(U. Tokyo) *(Stu)Nakajima Yusuke, (Reg)Shimogaki Yukihiro, (U. Tokyo/Kumamoto U) (Reg)Momose Takeshi
SCFD
Polymer
resistivity
ST-24304
16:20– 16:40S123Development of damage-less dry-purification of carbon nanotubes using Br2 vapor
(Waseda U.) *(Stu·PCEF)Goto Takuma, (Reg)Osawa Toshio, (Reg)Noda Suguru
Carbon nanotube
Purification
Bromine vapor
ST-24344
16:40– 17:00S124In-situ Quartz Crystal Microbalance Measurement of Adsorption for Trimethylaluminum
(U. Tokyo) *(Stu)Wu Yuxuan, (Stu)Liu Haonan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
ALD
QCM
Adsorption
ST-24705
Hall S(815), Day 2(Sep. 12)
(9:00–10:20) (Chair: Sugime Hisashi, Shimizu Hideharu)
9:00– 9:20S201Observation of the initial process of Cobalt film growth using variations in reflected light intensity.
(U. Tokyo) *(Stu)Kimura Shunsuke, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
cobalt
ALD
reflectance
ST-24895
9:20– 9:40S202Morphology Improvement of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film for Photovoltaic Use
(Kyoto U.) *(Int)Yang Ziguang, (Stu)Togami Keito, (Stu)Tanabe Maika, (Reg)Kawase Motoaki
Chemical vapor deposition
Methylammonium bismuth iodide
Molten bismuth
ST-24425
9:40– 10:00S203Rate analysis of coke deposition from hydrocarbons with different degrees of unsaturation
(Kyoto U.) *(Stu)Nakano Shinji, (Reg)Fujitsuka Hiroyasu, (Reg)Kawase Motoaki
coking
CVD
Carbon
ST-24255
10:00– 10:20S204Production of silicon-carbon composite materials by chemical vapor deposition for negative electrode of lithium-ion battery
(Waseda U.) *(Stu·PCEF)Oka Junya, (Reg)Osawa Toshio, (Reg)Noda Suguru
Chemical Vapor Deposition (CVD)
Silicon
Lithium-ion battery
ST-2476
10:20– 10:40Break
(10:40–11:50) (Chair: Sugime Hisashi, Shimizu Hideharu)
10:40– 11:00S206Detailed study of the effect of SiCl4 addition to SiC-CVI by MTS/H2
(U. Tokyo) *(Stu)Otaka Yuhei, (Reg)Sato Noboru, (Stu)Kimura Shunsuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
MTS
ST-24862
11:00– 11:20S207Investigation of high-speed impregnation conditions using high-concentration hydrogen supply in SiC-CVI process
(U. Tokyo) *(Stu)Kimura Shunsuke, (Stu)Otaka Yuhei, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
ST-24843
11:20– 11:50S208[Invited lecture] Development of Epitaxial Growth for High Performance SiC Power Devices
(Mitsubishi Electric) Tanaka Takanori
Silicon carbide
Power device
Epitaxial growth
ST-24518
(13:00–14:20) (Chair: Momose Takeshi, Noda Suguru)
13:00– 13:40S213[Review lecture] Current Status and Future Prospects of Hard Coatings for Cutting Tools by Chemical Vapor Deposition
(Kyocera) (Cor)Tanibuchi Takahito
CVD
Cutting tool
Hard coating
ST-24150
13:40– 14:00S215DFT study on reaction paths of AlN growth by MOCVD
(Kyoto U.) *(Stu)Li Yafei, (Reg)Kawase Motoaki
DFT
AlN
MOCVD
ST-24423
14:00– 14:20S216Improvement of COSMO-SAC method for estimating vapor pressure of metal complex
(U. Tokyo) *(Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
COSMO-SAC
metal complex
vapor pressure
ST-24824
(14:20–15:50) (Chair: Nishida Satoshi, Funato Yuuichi)
14:20– 14:40S217Photocatalytic Performance Evaluation of TiO2 and TiO2-CuO Nanoparticulate Thin Films Prepared by a Gas Phase System
(Hiroshima U.) *(Stu)Hudandini Meditha, (ITS, Indonesia) Kusdianto K., (Hiroshima U.) (Reg)Kubo Masaru, (Reg)Shimada Manabu
PECVD
PVD
TiO2-CuO heterojunction
ST-24778
14:40– 15:00S218Investigation of visible light responsive CuOx/TiO2 photocatalytic reaction mechanism using model catalyst structure
(U. Tokyo) *(Stu)Tanaka Jun, (Stu)Nakajima Yusuke, (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi
photocatalyst
visible light
reaction mechanism
ST-24926
15:00– 15:20S219Evaluation of the Physical Properties of Reactive sputtered MAX alloy thin films
(Osaka Metro. U.) *(Stu·PCEF)Ueda Kazuki, Wakamatsu Kazunobu, (Reg)Saito Takeyasu, (Reg)Okamoto Naoki
sputtering
MAX-phase
ST-24876
15:20– 15:50S220[Invited lecture] Structure and morphology control in thin films by using sputtering
(Kyushu U.) Itagaki Naho
sputtering
thin film
morphology control
ST-24783
(15:50–16:20)
15:50– 16:20Closing remark and Subdivision Meeting

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SCEJ 54th Autumn Meeting (Fukuoka, 2023)

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