List of received applications (By symposium/topics code)

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ST) SCEJ Trans-Division Symposium

ST-25. [Trans-Division Symposium] CVD, ALD and Dry Processes - Reaction Engineering for Structure & Function Control

Organizer(s): Shimizu Hideharu (Taiyo Nippon Sanso), Noda Suguru (Waseda Univ.)

Dry processes such as CVD and ALD have become important core technologies in various fields such as electronics, energy devices, and functional coatings. Especially in recent years, the importance of the semiconductor industry, which is also called the rice of industry, has been reaffirmed, and the construction and control of processes based on an understanding of the mechanism is increasingly required. In this symposium, the reaction mechanisms of thin film formation, fine particle synthesis, and microfabrication using dry processes will be understood from the viewpoint of reaction engineering, and rational and efficient reaction processes and reaction devices will be discussed.

Most recent update: 2024-11-22 04:33:01

The keywords that frequently used
in this topics code.
KeywordsNumber
CVD4*
SiC2
ALD2
CVI2
3D-LSI1

ACKN
No.
Title/Author(s)KeywordsStyle
7[Invited lecture] Fabrication and functionalization of compound semiconductor nanostructures by metal-organic vapor-phase selective growth
(Hokkaido U.) Tomioka Katsuhiro
vapor-phase selective growth
metal-organic vapor
compound semiconductor nanostructures
O
97Inline Si3H8 generation method for using in CVD / ALD
(Taiyo Nippon Sanso) (Cor)Taka Hiroshi
Generation
Si3H8
O
120[Invited lecture] Bulk GaN crystal growth by Low-pressure acidic ammonothermal method
(JSW) *(Cor)Kurimoto Kouhei, (Cor)Bao Quanxi, (Mitsubishi Chemical) (Cor)Mikawa Yutaka, (Cor)Saito Makoto, (Tohoku U. IMRAM) Shima Kohei, Ishiguro Tohru, Chichibu Shigefusa
GaN
Ammonothermal method
Bulk crystal
O
257[Invited lecture] The latest trends in printed circuit boards that support new lifestyles (social environmental change)
(Unimicron Japan) Waragai Yukishige
high-speed communication
high heat dissipation
printed circuit board
O
351[Invited lecture] Possibility of low-temperature deposition and processing using radical treatment
(Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru
3D-LSI
low-temperature process
radical treatment
O
418Advancement of the Time-Lag Method for Quantitative Assessment of Cu Diffusion Barrier Efficacy in Ultrathin Films for ULSI-Cu Interconnects
(U. Tokyo) *(Reg)Deng Yubin, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
Time-lag method
Barrier property
ULSI
O
484Molybdenum Atomic Layer Deposition Process Development by Effective Reactant Supply
(U. Tokyo) *(Stu)Obara Soken, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Molybdenum
Atomic Layer Deposition
reactant supply
O
813Investigation of Co Deposition Process Using CpCo(CO)2
(U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ALD
CVD
cobalt
O
821Kinetic study on Alumina ALD by trimethylaluminum through in-situ Quartz Crystal Microbalance
(U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Atomic Layer Depositon
Quartz Crystal Microbalance
Surface Adsorption
O
826Investigation of reaction kinetic equation for film formation in the CVI process for production of SiCf/SiC-CMC
(U. Tokyo) *(Stu)Yoshida Koki, (Reg)Otaka Yuhei, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
O
829Low-damage dispersion and spray-coating of carbon nanotubes for transparent heaters
(Waseda U.) *(Stu)Hasumi Naoumi, (Reg)Ohsawa Toshio, (Reg)Noda Suguru
Carbon nanotubes
Transparent heater
Spray coating
O
832Zr/ZrN thin film deposition process development for ULSI interconnect liner/barrier layer
(U. Tokyo) *(Stu)Tanaka Jun, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Zr/ZrN
ALD
PECVD
O
842Synthesis and application of Ag nanoparticles on substrates and in gases by vapor deposition
(Waseda U.) *(Stu)Nakajima Ryosuke, (Reg)Noda Suguru
Silver nanoparticles
Surface plasmon resonance
Vapor deposition
O
954Comprehensive SiC-CVI process development for SiCf/SiC-CMC mass production
(U. Tokyo) *(Reg)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
O
957Low temperature FM-CVD for high thermal conductive AlN growth for 3DIC
(U. Tokyo) *(Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
AlN
CVD
3DIC
O
1098A reaction engineering approach of bismuth-based perovskite thin film orientation adjustment
(Kyoto U.) *(Int)Yang Ziguang, (Reg)Kawase Motoaki
Chemical vapor deposition
Perovskite solar cell
crystal orientation control
O

List of received applications (By topics code)

List of received applications
SCEJ 55th Autumn Meeting (Sapporo, 2024)

Organizing Committee of SCEJ 55th Autumn Meeting (2024)
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