List of received applications (By symposium/topics code)

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5) Chemical reaction engineering

5-h. CVD & dry processes

Most recent update: 2024-08-12 19:59:01

The keywords that frequently used
in this topics code.
KeywordsNumber
Chemical vapor deposition3*
SiC3*
CVI3*
ALD3*
CVD2
carbon nanotube2
TEMAZ1

ACKN
No.
Title/Author(s)KeywordsStyle
65Formation of porous layer, rapid epitaxy, and detachment of monocrystalline Si film on and from monocrystalline Si wafer
(Waseda U.) *(Stu,PCEF)Ohashi Misako, (Reg)Osawa Toshio, (Reg)Noda Suguru
Monocrystalline Si film
Rapid vapor deposition
Porous Si
P
73Production of silicon-activated carbon composite materials by chemical vapor deposition for negative electrode of lithium-ion battery
(Waseda U.) *(Stu,PCEF)Oka Junya, (Kuraray) (Cor)Iwasaki Hideharu, (Cor)Nishinami Hiroyuki, (Cor)Arima Junichi, (Waseda U.) (Reg)Osawa Toshio, (Reg)Noda Suguru
Chemical Vapor Deposition (CVD)
Silicon
Lithium-ion battery
P
109Silicon Nitride ALD Process Using High Purity Hydrazine
(Taiyo Nippon Sanso) *(Cor)Wada Yoshifumi, (Cor)Murata Hayato, (Cor)Shimizu Hideharu
Siicon Nitride
Atomic Layer Deposition
Incubation Cycle
O
123Development of Molybdenum Atomic Layer Deposition Process for Next Generation of ULSI Interconnect
(U. Tokyo) *(Stu)Obara Soken, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Molybdenum
ALD
low resistivity
O
176Development of a dry purification method for carbon nanotubes using a safe etching agent
(Waseda U.) *(Stu)Tanaka Shun, (Stu,PCEF)Goto Takuma, (Reg)Osawa Toshio, (Reg)Noda Suguru
Carbon nanotubes
Purification
dry process
P
225Stable and continuous synthesis of carbon nanotubes by floating catalyst CVD with fluid mixing control
(Waseda U.) *(Reg)Lang Jianghua, (Reg)Osawa Toshio, (Reg)Noda Suguru
carbon nanotube
chemical vapor deposition
continuous process
O
232Investigation of Area Selective Co-ALD process utilizing in-situ observation of reflectance intensity.
(U. Tokyo) *(Stu)Kimura Shunsuke, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ALD
in-situ observation
reflectance
O
233Research on improving uniformity in furnace and high speed SiC infiltration in the production of SiC-CMC using Chemical Vapor Infiltration method.
(U. Tokyo) *(Stu)Yoshida Koki, (Stu)Otaka Yuhei, (Stu)Kimura Shunsuke, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
O
261SiOC coating on wood-based material by plasma CVD
(Gifu U.) *(Stu)Ito R., Komiyama M., (Reg)Nishida S.
PE-CVD
water-repellent
wood-based material
P
263Surface reforming of carbon materials by plasma treatment
(Gifu U.) *(Stu)Dinh Thi Quynh, Komiyama Masaharu, (Reg)Nishida Satoshi
plasma
carbon materials
sem
P
264Stable and continuous synthesis of carbon nanotubes by floating catalyst CVD with enhanced decomposition of catalyst sources
(Waseda U.) *(Stu)Naotsuka Yuki, (Reg)Lang Jianghua, (Reg)Osawa Toshio, (Reg)Noda Suguru
carbon nanotube
chemical vapor deposition
nanoparticle catalyst
P
273Study of ZrN thin film formation process using atomic layer deposition
(U. Tokyo) *(Stu)Tanaka Jun, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ZrN
ALD
TEMAZ
O
383Quantitative Analysis of Trimethylaluminum Physisorption for ALD
(U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Atomic Layer Depositon
Quartz Crystal Microbalance
Surface Adsorption
O
422Study in evaluation method of silicon texture by alkali etching
(Gifu U.) *(Stu)Sawada M., Komiyama M., (Reg)Nishida S.
solar cell
textured
MATLAB
P
516Investigation of Co Thin Film Thermal Atomic Layer Etching Process
(U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
ALE
atomic layer eching
cobalt
O
531Investigation of Continuous Cu Film Formation Process on Polymer
(U.Tokyo) *(Stu)Nakajima Yusuke, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Atomic Layer Depoition
Copper
on Polymer
O
562Reduction of reaction mechanism of SiC-CVI
(U. Tokyo) *(Reg)Sato Noboru, (Stu)Yoshida Koki, (Stu)Otaka Yuhei, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
SiC-CVI
CH3SiCl3
Reduced model
O
633Exploration of exhaust gas reforming conditions to improve yield and reduce by-product formation in SiC-CVI with high MTS partial pressure
(U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
CVI
SiC
Recycling
O
634Strategy for CVI process development in SiCf/SiC-CMC production
(U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
CVI
SiC
Process design
O
683CFD Simulation Study on factors influencing AlN compound single crystal growth
(Kyoto U.) *(Stu)Li Yafei, Murahashi Kousuke, (Reg)Kawase Motoaki
MOCVD
CFD
III-V compound
O
686Reaction Rate Equation Determination of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film
(Kyoto U.) *(Int)Yang Ziguang, (Stu)Togami Keito, (Stu)Tanabe Maika, (Reg)Kawase Motoaki
Chemical vapor deposition
Methylammonium bismuth iodide
Perovskite solar cell
O
785Rate analysis of carbon CVD from hydrocarbons with different degrees of unsaturation
(Kyoto U.) (Stu)Nakano Shinji, (Reg)Fujitsuka Hiroyasu, *(Reg)Kawase Motoaki
CVD
carbon
coking
O
786Surface activation of the copper surface by VUV-Redox method using xenon excimer lamp
(Osaka Metro. U.) *(Reg)Endo Shinichi, (Reg)Saito Takeyasu
VUV-Redo
Surface activation
O
787Evaluation of Reactive sputtered MAX alloy thin films with reducing gas
(Osaka Metro. U.) *(Reg)Saito Takeyasu, (Stu,PCEF)Ueda Kazuki, (Reg)Okamoto Naoki
sputtering
MAX-phase
O

List of received applications (By topics code)

List of received applications
SCEJ 89th Annual Meeting (Sakai, 2024)

Organizing Committee of SCEJ 89th Annual Meeting (2024)
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