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SCEJ 89th Annual Meeting (Sakai, 2024)
Program search result : 5-h : 24 programs
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Topics Code field begins with “5-h”; 24 programs are found.
The search results are sorted by the start time.
| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
|---|---|---|---|---|---|
| Day 2 | F201 | Reaction Rate Equation Determination of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film | Chemical vapor deposition Methylammonium bismuth iodide Perovskite solar cell | 5-h | 686 |
| Day 2 | F202 | Evaluation of Reactive sputtered MAX alloy thin films with reducing gas | sputtering MAX-phase | 5-h | 787 |
| Day 2 | F203 | Rate analysis of carbon CVD from hydrocarbons with different degrees of unsaturation | CVD carbon coking | 5-h | 785 |
| Day 2 | F205 | Stable and continuous synthesis of carbon nanotubes by floating catalyst CVD with fluid mixing control | carbon nanotube chemical vapor deposition continuous process | 5-h | 225 |
| Day 2 | F206 | Reduction of reaction mechanism of SiC-CVI | SiC-CVI CH3SiCl3 Reduced model | 5-h | 562 |
| Day 2 | F207 | Research on improving uniformity in furnace and high speed SiC infiltration in the production of SiC-CMC using Chemical Vapor Infiltration method. | SiC CVI CVD | 5-h | 233 |
| Day 2 | F208 | Exploration of exhaust gas reforming conditions to improve yield and reduce by-product formation in SiC-CVI with high MTS partial pressure | CVI SiC Recycling | 5-h | 633 |
| Day 2 | F209 | Strategy for CVI process development in SiCf/SiC-CMC production | CVI SiC Process design | 5-h | 634 |
| Day 3 | G301 | Quantitative Analysis of Trimethylaluminum Physisorption for ALD | Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption | 5-h | 383 |
| Day 3 | G302 | Study of ZrN thin film formation process using atomic layer deposition | ZrN ALD TEMAZ | 5-h | 273 |
| Day 3 | G303 | Development of Molybdenum Atomic Layer Deposition Process for Next Generation of ULSI Interconnect | Molybdenum ALD low resistivity | 5-h | 123 |
| Day 3 | G304 | Silicon Nitride ALD Process Using High Purity Hydrazine | Siicon Nitride Atomic Layer Deposition Incubation Cycle | 5-h | 109 |
| Day 3 | G305 | Investigation of Co Thin Film Thermal Atomic Layer Etching Process | ALE atomic layer eching cobalt | 5-h | 516 |
| Day 3 | G306 | Investigation of Area Selective Co-ALD process utilizing in-situ observation of reflectance intensity. | ALD in-situ observation reflectance | 5-h | 232 |
| Day 3 | G307 | Investigation of Continuous Cu Film Formation Process on Polymer | Atomic Layer Depoition Copper on Polymer | 5-h | 531 |
| Day 3 | G308 | Surface activation of the copper surface by VUV-Redox method using xenon excimer lamp | VUV-Redo Surface activation | 5-h | 786 |
| Day 3 | G309 | CFD Simulation Study on factors influencing AlN compound single crystal growth | MOCVD CFD III-V compound | 5-h | 683 |
| Day 3 | PE326 | Production of silicon-activated carbon composite materials by chemical vapor deposition for negative electrode of lithium-ion battery | Chemical Vapor Deposition (CVD) Silicon Lithium-ion battery | 5-h | 73 |
| Day 3 | PE336 | Surface reforming of carbon materials by plasma treatment | plasma carbon materials sem | 5-h | 263 |
| Day 3 | PE340 | Formation of porous layer, rapid epitaxy, and detachment of monocrystalline Si film on and from monocrystalline Si wafer | Monocrystalline Si film Rapid vapor deposition Porous Si | 5-h | 65 |
| Day 3 | PE344 | SiOC coating on wood-based material by plasma CVD | PE-CVD water-repellent wood-based material | 5-h | 261 |
| Day 3 | PE349 | [Featured presentation] Development of a dry purification method for carbon nanotubes using a safe etching agent | Carbon nanotubes Purification dry process | 5-h | 176 |
| Day 3 | PE356 | Stable and continuous synthesis of carbon nanotubes by floating catalyst CVD with enhanced decomposition of catalyst sources | carbon nanotube chemical vapor deposition nanoparticle catalyst | 5-h | 264 |
| Day 3 | PE357 | Study in evaluation method of silicon texture by alkali etching | solar cell textured MATLAB | 5-h | 422 |
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SCEJ 89th Annual Meeting (Sakai, 2024)
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