Title (J) field includes “単結晶”; 3 programs are found.
The search results are sorted by the start time.
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
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Day 3 | PD306 | Entropy analysis of thermal convection transition phenomena during semiconductor single crystal growth | Thermal Convection Entropy Production Crystal Growth | 2-a | 606 |
Day 3 | G309 | CFD Simulation Study on factors influencing AlN compound single crystal growth | MOCVD CFD III-V compound | 5-h | 683 |
Day 3 | PE340 | Formation of porous layer, rapid epitaxy, and detachment of monocrystalline Si film on and from monocrystalline Si wafer | Monocrystalline Si film Rapid vapor deposition Porous Si | 5-h | 65 |
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SCEJ 89th Annual Meeting (Sakai, 2024)