Sato Noboru - Program search result - SCEJ 90th Annual Meeting (Tokyo, 2025)

`SCEJ 90th Annual Meeting (Tokyo, 2025)`

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Program search result : Sato Noboru : 9 programs

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Authors field exact matches “Sato Noboru”; 9 programs are found.
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 3 9:20– 11:20	PD349	Evaluation of AlN film quality and step coverage by FM-CVD (U. Tokyo) *(Stu)Sato Ritsuki, (Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	CVD AlN 3DIC	5-h	258
Day 3 9:20– 11:20	PD356	Kinetic study on surface reactions using neural network potential for the optimal design of CVI process in SiC_f/SiC-CMC manufacturing (U. Tokyo) *(Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	SiC CVI CVD	5-h	321
Day 3 9:20– 11:20	PD369	Study of ALD process for Pd thin film and substrate dependence (U. Tokyo) *(Stu)Nagai Souga, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	palladium AS-ALD growth enhancer	5-h	345
Day 3 9:20– 11:20	PD372	Study of SiC-CVI Initial Growth under Low MTS and High Hydrogen Conditions (U. Tokyo) *(Stu)Hatakeyama Daiki, (Reg)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	SiC CVI CMC	5-h	430
Day 3 13:40– 14:00	J315	Study of low-temperature plasma deposition process for Nb thin films (U. Tokyo) *(Stu)Tanaka Jun, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	niobium plasma deposition low-temperature	5-h	313
Day 3 15:00– 15:20	J319	Estimation of surface equilibrium constant and surface reaction rate constant using neural network potential (U. Tokyo) *(Reg)Sato Noboru, (Stu)Yoshida Koki, (Reg)Otaka Yuhei, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	machine learned potential surface kinetics	5-h	461
Day 3 15:20– 15:40	J320	Adsorption state study of Trimethylaluminum with neural network potential (U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD CVD Surface Adsorption	5-h	263
Day 3 15:40– 16:00	J321	Evaluation of initial nucleation and growth of Co-ALD (U. Tokyo) *(Reg)Tamaoki Naoki, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	atomic layer deposition initial growth in-situ observation	5-h	551
Day 3 16:00– 16:20	J322	Molybdenum Atomic Layer Deposition Process Development using Mo(CO)₆ (U. Tokyo) *(Stu)Obara Soken, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Mo(CO)6 low resistivity good step coverage	5-h	324

Time

Paper
ID

Title / Authors

Keywords

Topic code

Ack.
number

Day 3
9:20– 11:20

PD349

Evaluation of AlN film quality and step coverage by FM-CVD