Hall EE, Day 2 - Hall and day program - SCEJ 56th Autumn Meeting (Tokyo, 2025)

`SCEJ 56th Autumn Meeting (Tokyo, 2025)`

Last modified: 2025-09-29 10:33:36

Meeting Info.
Program
- Program Menu
- Tech. Sessions
- narrow view
- Day 1
- Day 2
- Day 3
- Day 4
By Session
- Session list
- Ceremony
  - Ceremony
- SV: VisionSymp
  - SV-1
- SP,IN: Special
  - SP-1
  - SP-2
  - SP-3
  - IN-1
  - IN-2
- HQ: HQ Prog.
  - HQ-11
  - HQ-12
  - HQ-13
  - HQ-14
- ST: Trans-Div.
  - ST-21
  - ST-22
  - ST-23
  - ST-24
  - ST-25
  - ST-26
  - ST-27
  - ST-28
  - ST-29
  - ST-30
- SY: 51-59
  - SY-51
  - SY-52
  - SY-53
  - SY-54
  - SY-55
  - SY-56
  - SY-57
  - SY-58
  - SY-59
- SY: 60-69
  - SY-60
  - SY-61
  - SY-62
  - SY-63
  - SY-64
  - SY-65
  - SY-66
  - SY-67
  - SY-68
  - SY-69
- SY: 70-79
  - SY-70
  - SY-71
  - SY-72
  - SY-73
  - SY-74
  - SY-75
  - SY-76
  - SY-77
  - SY-78
  - SY-79
- SY: 80-88
  - SY-80
  - SY-81
  - SY-82
  - SY-83
  - SY-84
  - SY-85
  - SY-86
  - SY-87
  - SY-88
By Hall
Search/Index

Hall and day program : Hall EE, Day 2

The preprints(abstracts) are now open. These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants (excludes free registration) and invited persons are required.

Hall EE(C.M. Bldg. 3F 2303), Day 2(Sep. 17)

ST-26

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
ST-26 [Trans-Division Symposium] CVD/ALD & Dry Process, Control of Structure and Function of Material by Reaction Engineering
(9:00–11:00) (Chair: Shimizu Hideharu, Shimada Manabu)
9:00– 9:20	EE201	Evaluation of the Effects of Wall Adsorption and Transport Phenomena on QCM-Based Adsorption Kinetics Analysis in ALD (U. Tokyo) *(Reg)Yamaguchi Jun, (Stu)Wu Yuxuan, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD Atomic Layer Deposition QCM	ST-26	806
9:20– 9:40	EE202	Temperature Dependence of TMA Adsorption Kinetics in Al₂O₃ Atomic Layer Deposition (U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption	ST-26	336
9:40– 10:00	EE203	Computation of Al₂O₃ ALD by trimethylaluminum with Kinetic Monte Carlo and neural network potential (U. Tokyo) *(Stu)Zou Yichen, (Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD KMC NNP	ST-26	726
10:00– 10:20	EE204	Reaction Mechanism Analysis of Mo-CVD/ALD using Mo(CO)₆ (U. Tokyo) *(Stu)Nagai Souga, Obara Soken, (U. Tokyo) (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Mo(CO)6 step coverage interconnect	ST-26	405
10:20– 11:00	EE205	[Invited lecture] Development of precursors and deposition processes for atomic layer deposition (Kojundo Chemical Laboratory) Mizutani Fumikazu	Atomic Layer Deposition Precursor ABC-type ALD	ST-26	606
(13:00–15:20) (Chair: Tsukune Atsuhiro, Momose Takeshi)
13:00– 13:40	EE213	[Review lecture] The Potential of Quantum Computing in Chemical Reaction Analysis (QunaSys) Koh Sho	chemical reaction quantum computer quantum computing	ST-26	743
13:40– 14:00	EE215	Steric Hindrance Effects and Reaction Kinetics in Co-ALD Using CCTBA Precursor (U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD Atomic Layer Deposition	ST-26	801
14:00– 14:20	EE216	Molecular dynamics simulations of precursor adsorption in the Co-ALD process using neural network potentials (U. Tokyo) *(Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Yamaguchi Jun, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Atomic layer deposition Neural network potential Growth per cycle	ST-26	347
14:20– 14:40	EE217	Accurate Estimation of Surface Reaction Rate Constants in SiC-CVD via Neural Network Potentials (U. Tokyo) *(Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	SiC CVD Neural network potential	ST-26	537
14:40– 15:00	EE218	Development of a method for simultaneous measurement of saturated solubility and diffusion coefficient of organometallic compounds in high-temperature supercritical CO₂/H₂ (Kumamoto U.) *(Stu)Oda S., Nakamura A., Kondo S., (Reg)Momose T.	Supercritical Fluid Deposition saturation solubility diffusion coefficient	ST-26	270
15:00– 15:20	EE219	Rate process of SiC_xN_yO_z deposition by room temperature PECVD (Yokohama Nat. U.) (Reg)Habuka Hitoshi	PECVD rate process	ST-26	6

DispCtl:	Preferences

Screen preferences
Abstract PDFs view (Some settings may not work as expected.)
Current window
Open another window
Popup view (fit to width)
Popup view (fit to page)
Download
Link panels to Related/Adjacent pages
Show
No show

Technical program
Technical sessions (Wide) (For narrow screen)
Session programs
Search in technical program
SCEJ 56th Autumn Meeting (Tokyo, 2025)

www4.scej.org