Hall EE - Hall and day program - SCEJ 56th Autumn Meeting (Tokyo, 2025)

`SCEJ 56th Autumn Meeting (Tokyo, 2025)`

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Hall and day program : Hall EE

The preprints(abstracts) are now open. These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants (excludes free registration) and invited persons are required.

Hall EE(C.M. Bldg. 3F 2303)

Hall EE, Day 1 | Hall EE, Day 2
ST-26

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Hall EE(C.M. Bldg. 3F 2303), Day 1(Sep. 16)
ST-26 [Trans-Division Symposium] CVD/ALD & Dry Process, Control of Structure and Function of Material by Reaction Engineering
(13:00–14:40) (Chair: Nishida Satoshi, Habuka Hitoshi)
13:00– 13:40	EE113	[Invited lecture] Development of carbon and carbon composite materials with a tailored nanostructure using CVD techniques (Fukushima U.) (Reg)Iwamura Shinichiroh	CVD Carbon	ST-26	285
13:40– 14:00	EE115	Evaluation of gas detection characteristics of TiO₂ nanoparticulate thin films fabricated in gas phase (Hiroshima U.) *(Stu·PCEF)Hara Takumi, (Stu·PCEF)Tanaka Naoki, (Reg)Kubo Masaru, (Reg)Shimada Manabu	gas sensor aerosol particle deposition plasma CVD	ST-26	672
14:00– 14:20	EE116	CH₄/CO₂ reforming for production of H₂-Rich gas and CNT: Influence of H₂S and H₂O (Kyoto U.) *(Stu)Saconsint Supanida, (Reg)Sano Noriaki, (Reg)Suzuki Tetsuo, (Mahidol U.) Ratchahat Sakhon	catalyst carbon nanotube biogas	ST-26	944
14:20– 14:40	EE117	Carbon deposition during dry reforming of CH₄ on Ni catalysts prepared by flame synthesis (Kanazawa U.) *(Reg)Fujiwara Kakeru, Ogata Isaki, (Reg)Osaka Yugo, (Reg)Tsujiguchi Takuya, (Reg)Kodama Akio	Flame spray pyrolysis Ni catalysts Dry reforming of methane	ST-26	277
14:40– 15:00		Break
(15:00–17:20) (Chair: Fujiwara Kakeru, Tamaoki Naoki)
15:00– 15:40	EE119	[Invited lecture] Synthesis of silica membranes using atmospheric-pressure plasma and their application in gas separation (Hiroshima U.) (Reg)Nagasawa Hiroki	plasma CVD gas separation	ST-26	731
15:40– 16:00	EE121	Deposition characteristics of TiSiCN by DC plasma CVD (Osaka Metro. U.) *(Stu)Kurogi Rizu, (Reg)Saito Takeyasu, (Reg)Okamoto Naoki, Kawamoto Mika	DC plasma CVD TiSiCN	ST-26	914
16:00– 16:20	EE122	Growth Dynamics of Bismuth-Based Perovskite Thin Films via Chemical Vapor Deposition (Kyoto U.) *(Int)Yang Ziguang, (Reg)Kawase Motoaki	Chemical vapor deposition Perovskite solar cell crystal orientation control	ST-26	888
16:20– 16:40	EE123	TMA/NH₃-based FM-CVD Process for High-Thermal-Conductivity AlN Films at 400 ^oC (U. Tokyo) *(Stu)Hatakeyama Daiki, (Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	FM-CVD 3DIC AlN	ST-26	338
16:40– 17:00	EE124	Investigation of the Growth Enhancement Effect of Pd on Co-ALD (U. Tokyo) *(Reg)Deng Yubin, (Reg)Yamaguchi Jun, (Reg)Otaka Yuhei, (Stu)Nagai Souga, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Nucleation enhancer ALD ULSI	ST-26	305
17:00– 17:20	EE125	Investigation of alkyl chain length dependence of inhibitors for area selective deposition of HfO₂ (Kioxia) *(Reg)Tanuma Masakazu, Matsuba Hiroshi, Asakawa Koji, Fukumizu Hiroyuki	Area selective deposition Inhibitor	ST-26	740
Hall EE(C.M. Bldg. 3F 2303), Day 2(Sep. 17)
(9:00–11:00) (Chair: Shimizu Hideharu, Shimada Manabu)
9:00– 9:20	EE201	Evaluation of the Effects of Wall Adsorption and Transport Phenomena on QCM-Based Adsorption Kinetics Analysis in ALD (U. Tokyo) *(Reg)Yamaguchi Jun, (Stu)Wu Yuxuan, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD Atomic Layer Deposition QCM	ST-26	806
9:20– 9:40	EE202	Temperature Dependence of TMA Adsorption Kinetics in Al₂O₃ Atomic Layer Deposition (U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption	ST-26	336
9:40– 10:00	EE203	Computation of Al₂O₃ ALD by trimethylaluminum with Kinetic Monte Carlo and neural network potential (U. Tokyo) *(Stu)Zou Yichen, (Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD KMC NNP	ST-26	726
10:00– 10:20	EE204	Reaction Mechanism Analysis of Mo-CVD/ALD using Mo(CO)₆ (U. Tokyo) *(Stu)Nagai Souga, Obara Soken, (U. Tokyo) (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Mo(CO)6 step coverage interconnect	ST-26	405
10:20– 11:00	EE205	[Invited lecture] Development of precursors and deposition processes for atomic layer deposition (Kojundo Chemical Laboratory) Mizutani Fumikazu	Atomic Layer Deposition Precursor ABC-type ALD	ST-26	606
(13:00–15:20) (Chair: Tsukune Atsuhiro, Momose Takeshi)
13:00– 13:40	EE213	[Review lecture] The Potential of Quantum Computing in Chemical Reaction Analysis (QunaSys) Koh Sho	chemical reaction quantum computer quantum computing	ST-26	743
13:40– 14:00	EE215	Steric Hindrance Effects and Reaction Kinetics in Co-ALD Using CCTBA Precursor (U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	ALD Atomic Layer Deposition	ST-26	801
14:00– 14:20	EE216	Molecular dynamics simulations of precursor adsorption in the Co-ALD process using neural network potentials (U. Tokyo) *(Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Yamaguchi Jun, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	Atomic layer deposition Neural network potential Growth per cycle	ST-26	347
14:20– 14:40	EE217	Accurate Estimation of Surface Reaction Rate Constants in SiC-CVD via Neural Network Potentials (U. Tokyo) *(Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	SiC CVD Neural network potential	ST-26	537
14:40– 15:00	EE218	Development of a method for simultaneous measurement of saturated solubility and diffusion coefficient of organometallic compounds in high-temperature supercritical CO₂/H₂ (Kumamoto U.) *(Stu)Oda S., Nakamura A., Kondo S., (Reg)Momose T.	Supercritical Fluid Deposition saturation solubility diffusion coefficient	ST-26	270
15:00– 15:20	EE219	Rate process of SiC_xN_yO_z deposition by room temperature PECVD (Yokohama Nat. U.) (Reg)Habuka Hitoshi	PECVD rate process	ST-26	6

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SCEJ 56th Autumn Meeting (Tokyo, 2025)

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