Nishida Satoshi - Program search result - SCEJ 55th Autumn Meeting (Sapporo, 2024)

`SCEJ 55th Autumn Meeting (Sapporo, 2024)`

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Program search result : Nishida Satoshi : 7 programs

The preprints are now open. These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants and invited persons are required.

Authors field exact matches “Nishida Satoshi”; 7 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 1 9:00– 12:00	YB133	Elucidation of the SiOx film formation mechanism by plasma optical emission spectrometry (Gifu U.) *(Stu)Nonoyama Yudai, Komiyama Masaharu, (Reg)Nishida Satoshi	SiOx Plasma coating	SY-63	374
Day 1 9:00– 12:00	YB136	Water-repellent coatings on wood-based materials with plasma CVD (Gifu U.) *(Stu)Sugiura Naoya, Komiyama Masaharu, (Reg)Nishida Satoshi	Plasma coating SiOx	SY-63	283
Day 1 9:00– 12:00	YB142	Research on surface modification of carbon materials using plasma (Gifu U.) *(Stu)Owa Yuki, Komiyama Masaharu, (Reg)Nishida Satoshi	Plasma Surface modification Hydrophilization	SY-63	88
Day 1 15:40– 16:40	YB133	Elucidation of the SiOx film formation mechanism by plasma optical emission spectrometry (Gifu U.) *(Stu)Nonoyama Yudai, Komiyama Masaharu, (Reg)Nishida Satoshi	SiOx Plasma coating	SY-63	374
Day 1 16:40– 17:40	YB136	Water-repellent coatings on wood-based materials with plasma CVD (Gifu U.) *(Stu)Sugiura Naoya, Komiyama Masaharu, (Reg)Nishida Satoshi	Plasma coating SiOx	SY-63	283
Day 1 16:40– 17:40	YB142	Research on surface modification of carbon materials using plasma (Gifu U.) *(Stu)Owa Yuki, Komiyama Masaharu, (Reg)Nishida Satoshi	Plasma Surface modification Hydrophilization	SY-63	88
Day 2 13:00– 14:40	Chair: Shimogaki Yukihiro, Nishida Satoshi
	J213	[Invited lecture] Possibility of low-temperature deposition and processing using radical treatment (Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru	3D-LSI low-temperature process radical treatment	ST-25	351
	J215	Low temperature FM-CVD for high thermal conductive AlN growth for 3DIC (U. Tokyo) *(Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro	AlN CVD 3DIC	ST-25	957
	J216	Investigation of reaction kinetic equation for film formation in the CVI process for production of SiC_f/SiC-CMC (U. Tokyo) *(Stu)Yoshida Koki, (Reg)Otaka Yuhei, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro	SiC CVI CVD	ST-25	826
	J217	Comprehensive SiC-CVI process development for SiC_f/SiC-CMC mass production (U. Tokyo) *(Reg)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro	SiC CVI CVD	ST-25	954

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SCEJ 55th Autumn Meeting (Sapporo, 2024)

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