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SCEJ 55th Autumn Meeting (Sapporo, 2024)

Last modified: 2024-09-09 18:25:12

Session programs : ST-25 : J206

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ST-25 [Trans-Division Symposium]
CVD, ALD and Dry Processes - Reaction Engineering for Structure & Function Control

Organizers: Shimizu Hideharu (Taiyo Nippon Sanso), Noda Suguru (Waseda Univ.)

Dry processes such as CVD and ALD have become important core technologies in various fields such as electronics, energy devices, and functional coatings. Especially in recent years, the importance of the semiconductor industry, which is also called the rice of industry, has been reaffirmed, and the construction and control of processes based on an understanding of the mechanism is increasingly required. In this symposium, the reaction mechanisms of thin film formation, fine particle synthesis, and microfabrication using dry processes will be understood from the viewpoint of reaction engineering, and rational and efficient reaction processes and reaction devices will be discussed.

Hall J, Day 1 | Hall J, Day 2

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Hall J(Block C 3F C310), Day 1(Sep. 11)
(13:00–15:00) (Chair: Noda Suguru, Kawakami Masato)
13:0013:40J113[Invited lecture] Fabrication and functionalization of compound semiconductor nanostructures by metal-organic vapor-phase selective growth
(Hokkaido U.) Tomioka Katsuhiro
vapor-phase selective growth
metal-organic vapor
compound semiconductor nanostructures
ST-257
13:4014:00J115Molybdenum Atomic Layer Deposition Process Development by Effective Reactant Supply
(U. Tokyo) *(Stu)Obara Soken, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Molybdenum
Atomic Layer Deposition
reactant supply
ST-25484
14:0014:20J116Kinetic study on Alumina ALD by trimethylaluminum through in-situ Quartz Crystal Microbalance
(U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Atomic Layer Depositon
Quartz Crystal Microbalance
Surface Adsorption
ST-25821
14:2014:40J117Inline Si3H8 generation method for using in CVD / ALD
(Taiyo Nippon Sanso) (Cor)Taka Hiroshi
Generation
Si3H8
ST-2597
14:4015:00J118Synthesis and application of Ag nanoparticles on substrates and in gases by vapor deposition
(Waseda U.) *(Stu)Nakajima Ryosuke, (Reg)Noda Suguru
Silver nanoparticles
Surface plasmon resonance
Vapor deposition
ST-25842
15:0015:20Break
(15:20–17:00) (Chair: Kawase Motoaki, Shimizu Hideharu)
15:2016:00J120[Invited lecture] Bulk GaN crystal growth by Low-pressure acidic ammonothermal method
(JSW) *(Cor)Kurimoto Kouhei, (Cor)Bao Quanxi, (Mitsubishi Chemical) (Cor)Mikawa Yutaka, (Cor)Saito Makoto, (Tohoku U. IMRAM) Shima Kohei, Ishiguro Tohru, Chichibu Shigefusa
GaN
Ammonothermal method
Bulk crystal
ST-25120
16:0016:20J122Investigation of Co Deposition Process Using CpCo(CO)2
(U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ALD
CVD
cobalt
ST-25813
16:2016:40J123Advancement of the Time-Lag Method for Quantitative Assessment of Cu Diffusion Barrier Efficacy in Ultrathin Films for ULSI-Cu Interconnects
(U. Tokyo) *(Reg)Deng Yubin, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
Time-lag method
Barrier property
ULSI
ST-25418
16:4017:00J124Zr/ZrN thin film deposition process development for ULSI interconnect liner/barrier layer
(U. Tokyo) *(Stu)Tanaka Jun, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Zr/ZrN
ALD
PECVD
ST-25832
Hall J(Block C 3F C310), Day 2(Sep. 12)
(10:40–12:00) (Chair: Shimada Manabu, Tsukune Atsuhiro)
10:4011:20J206[Invited lecture] The latest trends in printed circuit boards that support new lifestyles (social environmental change)
(Unimicron Japan) Waragai Yukishige
high-speed communication
high heat dissipation
printed circuit board
ST-25257
11:2011:40J208Low-damage dispersion and spray-coating of carbon nanotubes for transparent heaters
(Waseda U.) *(Stu)Hasumi Naoumi, (Reg)Ohsawa Toshio, (Reg)Noda Suguru
Carbon nanotubes
Transparent heater
Spray coating
ST-25829
11:4012:00J209A reaction engineering approach of bismuth-based perovskite thin film orientation adjustment
(Kyoto U.) *(Int)Yang Ziguang, (Reg)Kawase Motoaki
Chemical vapor deposition
Perovskite solar cell
crystal orientation control
ST-251098
(13:00–14:40) (Chair: Shimogaki Yukihiro, Nishida Satoshi)
13:0013:40J213[Invited lecture] Possibility of low-temperature deposition and processing using radical treatment
(Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru
3D-LSI
low-temperature process
radical treatment
ST-25351
13:4014:00J215Low temperature FM-CVD for high thermal conductive AlN growth for 3DIC
(U. Tokyo) *(Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
AlN
CVD
3DIC
ST-25957
14:0014:20J216Investigation of reaction kinetic equation for film formation in the CVI process for production of SiCf/SiC-CMC
(U. Tokyo) *(Stu)Yoshida Koki, (Reg)Otaka Yuhei, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
ST-25826
14:2014:40J217Comprehensive SiC-CVI process development for SiCf/SiC-CMC mass production
(U. Tokyo) *(Reg)Otaka Yuhei, (Stu)Yoshida Koki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Shimogaki Yukihiro
SiC
CVI
CVD
ST-25954

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SCEJ 55th Autumn Meeting (Sapporo, 2024)


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