Last modified: 2024-09-19 02:24:28
Dry processes such as CVD and ALD have become important core technologies in various fields such as electronics, energy devices, and functional coatings. Especially in recent years, the importance of the semiconductor industry, which is also called the rice of industry, has been reaffirmed, and the construction and control of processes based on an understanding of the mechanism is increasingly required. In this symposium, the reaction mechanisms of thin film formation, fine particle synthesis, and microfabrication using dry processes will be understood from the viewpoint of reaction engineering, and rational and efficient reaction processes and reaction devices will be discussed.
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
---|---|---|---|---|---|
Hall J, Day 1 | |||||
(13:00–15:00) (Chair: | |||||
J113 | [Invited lecture] Fabrication and functionalization of compound semiconductor nanostructures by metal-organic vapor-phase selective growth | vapor-phase selective growth metal-organic vapor compound semiconductor nanostructures | ST-25 | 7 | |
J115 | Molybdenum Atomic Layer Deposition Process Development by Effective Reactant Supply | Molybdenum Atomic Layer Deposition reactant supply | ST-25 | 484 | |
J116 | Kinetic study on Alumina ALD by trimethylaluminum through in-situ Quartz Crystal Microbalance | Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption | ST-25 | 821 | |
J117 | Inline Si3H8 generation method for using in CVD / ALD | Generation Si3H8 | ST-25 | 97 | |
J118 | Synthesis and application of Ag nanoparticles on substrates and in gases by vapor deposition | Silver nanoparticles Surface plasmon resonance Vapor deposition | ST-25 | 842 | |
Break | |||||
(15:20–17:00) (Chair: | |||||
J120 | [Invited lecture] Bulk GaN crystal growth by Low-pressure acidic ammonothermal method | GaN Ammonothermal method Bulk crystal | ST-25 | 120 | |
J122 | Investigation of Co Deposition Process Using CpCo(CO)2 | ALD CVD cobalt | ST-25 | 813 | |
J123 | Advancement of the Time-Lag Method for Quantitative Assessment of Cu Diffusion Barrier Efficacy in Ultrathin Films for ULSI-Cu Interconnects | Time-lag method Barrier property ULSI | ST-25 | 418 | |
J124 | Zr/ZrN thin film deposition process development for ULSI interconnect liner/barrier layer | Zr/ZrN ALD PECVD | ST-25 | 832 | |
Hall J, Day 2 | |||||
(10:40–12:00) (Chair: | |||||
J206 | [Invited lecture] The latest trends in printed circuit boards that support new lifestyles (social environmental change) | high-speed communication high heat dissipation printed circuit board | ST-25 | 257 | |
J208 | Low-damage dispersion and spray-coating of carbon nanotubes for transparent heaters | Carbon nanotubes Transparent heater Spray coating | ST-25 | 829 | |
J209 | A reaction engineering approach of bismuth-based perovskite thin film orientation adjustment | Chemical vapor deposition Perovskite solar cell crystal orientation control | ST-25 | 1098 | |
(13:00–14:40) (Chair: | |||||
J213 | [Invited lecture] Possibility of low-temperature deposition and processing using radical treatment | 3D-LSI low-temperature process radical treatment | ST-25 | 351 | |
J215 | Low temperature FM-CVD for high thermal conductive AlN growth for 3DIC | AlN CVD 3DIC | ST-25 | 957 | |
J216 | Investigation of reaction kinetic equation for film formation in the CVI process for production of SiCf/SiC-CMC | SiC CVI CVD | ST-25 | 826 | |
J217 | Comprehensive SiC-CVI process development for SiCf/SiC-CMC mass production | SiC CVI CVD | ST-25 | 954 |
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SCEJ 55th Autumn Meeting (Sapporo, 2024)